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PDF SPGP0380A Data sheet ( Hoja de datos )
| Número de pieza | SPGP0380A | |
| Descripción | SEMIHOW POWER SWITCH | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPGP0380A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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January 2011
SPGP0380A
VER : Preliminary_2
( SEMIHOW POWER SWITCH )
FEATURES
Variable frequency operation
Low Start-up Current(Typ.100uA )
Pulse by Pulse Current Limiting
Over Current Protection
Over Voltage Protection (Min. 20)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto-Restart Mode
Frequency Modulation for low EMI
Advanced Burst-Mode Operation
APPLICATION
SMPS for STB, SVR, DVD & DVCD
SMPS for Printer, Facsimile & Scanner
Adaptor
DESCRIPTION
www.DataSheet.net/
The SemiHow Power Switch product family is specially designed for an off-line SMPS with minimal external components.
The SemiHow Power Switch consists of a high voltage power SenseFET and a current mode PWM IC.
It has a basic platform well suited for the cost effective design in either a flyback converter
INTERNAL BLOCK DIAGRAM
◎ SEMIHOW REV.PLIMILARY” January 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Typical Characteristics ( SenseFET Part )
(SPGP0380A)
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
* Notes :
1. 300us Pulse Test
2. TC = 25oC
100
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
10
1
0.1
2
150oC
25oC
-25oC
* Notes :
1. V = 30V
DS
2. 300us Pulse Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
7
6
5 VGS = 10V
4
3
VGS = 20V
2
1
Note : TJ = 25oC
0
0123456
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
800
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
Coss
400 * Note ;
1. VGS = 0 V
2. f = 1 MHz
200 Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
1
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0.1
0.4
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10 VDS = 400V
VDS = 640V
8
6
4
2
* Note : ID = 3.0A
0
0 4 8 12 16 20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.PLIMILARY” January 2011
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPGP0380A.PDF ] | |
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