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PDF 2N2222AHR Data sheet ( Hoja de datos )
| Número de pieza | 2N2222AHR | |
| Descripción | Hi-Rel NPN bipolar transistor | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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2N2222AHR
Hi-Rel 40 V - 0.8 A NPN transistor
Features
Datasheet — production data
Parameter
BVCEO min
IC (max)
hFE at 10 V - 150 mA
ESCC
JANS
40 V
50 V
0.8 A
100
■ Linear gain characteristics
■ Hermetic packages
■ ESCC and JANS qualified
■ European preferred part list EPPL
■ Up to 100 krad(Si) low dose rate
3
1
2
LCC-3
TO-18
1
2
3
3
4
1
2
LCC-3UB
Pin 4 in LCC-3UB is connected to the metallic lid.
Figure 1. Internal schematic diagramI
Description
The 2N2222AHR is a silicon planar NPN
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
www.DataSheet.net/
Table 1. Devices summary(1)
Device
Qualification
Agency spec.
Package Radiation level EPPL
JANS2N2222A
JANSR2N2222A
JANS
MIL-PRF-19500/255 LCC-3UB
-
100 krad
-
-
SOC2222AUB
SOC2222AUBxxSW
LCC-3UB
-
100 krad
Yes
Yes
SOC2222A
SOC2222AxxSW
ESCC
5201/002
LCC-3
-
100 krad
Yes
Yes
2N2222AHR
2N2222ASW
TO-18
-
100 krad
-
-
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels
May 2012
This is information on a product in full production.
Doc ID 16558 Rev 9
1/18
www.st.com
18
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
2N2222AHR
Electrical characteristics
Table 4. JANS electrical characteristics (continued)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ton Turn-on time
VCC = 30 V
IB1 = 15 mA
IC = 150 mA
toff Turn-off time
VCC = 30 V
IC = 150 mA
IB1 = -IB2 = 15 mA
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
- 35 ns
- 300 ns
2.2
ESCC electrical characteristics
Table 5. ESCC electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICBO
Collector cut-off
current (IE = 0)
IEBO
Emitter cut-off current
(IC = 0)
V(BR)CBO
Collector-base
breakdown voltage
(IE = 0)
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
VCE(sat) (1)
Collector-emitter
saturation voltage
VCB = 60 V
VCB= 60 V
VEB = 3 V
Tamb = 150 °C
IC = 100 µA
IC = 30 mA
www.DataSheet.net/
IE = 100 µA
IC = 150 mA IB = 15 mA
75
40
6
VBE(sat) (1)
Base-emitter
saturation voltage
IC = 150 mA IB = 15 mA
hFE (1)
hfe
DC current gain
Small signal current
gain
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 10 mA
Tamb = -55 °C
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 20 V
f = 100 MHz
IC = 20 mA
35
75
100
40
35
3
Cobo
Output capacitance
(IE = 0)
VCB = 10 V
100 kHz ≤ f ≤1 MHz
-
-
-
-
-
-
0.87
-
-
-
10
10
10
0.3
1.2
300
10
8
nA
µA
nA
V
V
V
V
V
pF
Doc ID 16558 Rev 9
5/18
Datasheet
5 Page 
2N2222AHR
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8.
Product mass summary
Package
LCC-3UB
LCC-3
TO-18
Mass (g)
0.06
0.06
0.40
www.DataSheet.net/
Doc ID 16558 Rev 9
11/18
Datasheet pdf - http://www.DataSheet4U.co.kr/
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