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PDF AP2530GY Data sheet ( Hoja de datos )
| Número de pieza | AP2530GY | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP2530GY
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge
▼ Low On-resistance
▼ Surface Mount Package
▼ RoHS Compliant
Description
D2
S1
D1
SOT-26
G2
S2
G1
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
D1
The SOT-26 package is universally used for all commercial-industrial G1
applications.
G2
S1
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
www.DataSheet.net/
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
3.3 -2.3
2.6 -1.8
10 -10
1.14
0.01
-55 to 150
-55 to 150
Max.
Value
110
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
200425051-1/7
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
N-Channel
12
ID=3A
9 V DS = 25 V
6
3
0
012345
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
100us
1ms
1
10ms
0.1
T A =25 o C
Single Pulse
100ms
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
8
V DS =5V
6
T j =25 o C
T j =150 o C
4
2
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
AP2530GY
f=1.0MHz
1000
C iss
100
C oss
C rss
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
0.1
www.DataSheet.net/
0.01
Duty factor=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10 100
Fig 10. Effective Transient Thermal Impedance
VG
4.5V
QG
QGS
QGD
Charge
Q
Fig 12. Gate Charge Waveform
5/7
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP2530GY.PDF ] | |
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