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PDF CY20AAJ-8H Data sheet ( Hoja de datos )

Número de pieza CY20AAJ-8H
Descripción N Channel IGBT
Fabricantes Renesas 
Logotipo Renesas Logotipo



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To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
www.DataSheet.net/
Datasheet pdf - http://www.DataSheet4U.co.kr/

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CY20AAJ-8H pdf
CY20AAJ-8H
Application Example
IXe
Vtrig
CM
+
VCM
Trigger Signal Vtrig
RG
30
VCE
VG IGBT
IGBT
Gate Voltage
VG
VCM
ICP
CM
VGE
Recommended Operation
Conditions
330 V
120 A
330 µF
5V
Maximum Operation
Conditions
350 V
130 A
400 µF
Xe Tube Current IXe
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 , it is
satisfied.)
3. The operation life should be endured 5,000 shots under the charge current (IXe 130 A : full luminescence
condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period
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under full luminescence condition is over 3 seconds.
4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.
Rev.2.00, Nov 29, 2005, page 3 of 4
Datasheet pdf - http://www.DataSheet4U.co.kr/

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