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PDF TQP8M9013 Data sheet ( Hoja de datos )
| Número de pieza | TQP8M9013 | |
| Descripción | 0.5 Watt 2-Stage Linear Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TQP8M9013
½ W High Linearity 5V 2-Stage Amplifier
Applications
• Repeaters
• Mobile Infrastructure
• LTE / WCDMA / CDMA / EDGE
24-pin 4x4mm leadless QFN package
Product Features
• 700-3800 MHz
• 29.5 dB Gain @ 2140 MHz
• +28 dBm P1dB
• +44 dBm Output IP3
• 2.9 dB Noise Figure
• +5V Supply Voltage
• MTTF > 1000 Years
Functional Block Diagram
GND / NNCC
RF OUT2 / Vcc
RF OUT2 / Vcc
General Description
Pin Configuration
www.DataSheet.net/
The TQP8M9013 is a high dynamic range two-stage driver
amplifier in a low-cost surface-mount package. The
amplifier is able to achieve high performance across a
broad range with +44 dBm OIP3, +28 dBm P1dB, and 2.9
dB Noise Figure while drawing 225 mA current at 2140
MHz. The product consists of a high linearity, low noise
amplifier stage, followed by a ½W high linearity driver
amplifier.
The TQP8M9013 is available in a standard lead-free
/green/RoHS-compliant 24-pin 4x4mm QFN package. All
devices are 100% RF and DC tested.
Pin #
Symbol
3 Amp1 RF Input
15, 16
Amp2 RF Output / Vcc
20 Amp2 RF Input
23 Amp1 RF Output / Vdd
Pins 4, 19, and 24 are N/C internally, but may be
connected as signal pins on the PCB.
All other pins are N/C internally.
The TQP8M9013 is targeted for use as a driver amplifier
in wireless infrastructure where high linearity, medium
power, and high efficiency are required. Internal biasing
allows the amplifier to maintain high linearity over
temperature and operate directly off a single +5V supply.
This combination makes the device an excellent candidate
for transceiver line cards in current and next generation
multi-carrier 3G/4G base stations or repeaters.
Ordering Information
Part No.
Description
TQP8M9013
½W 5V 2-stage Amplifier
TQP8M9013-PCB900 900 MHz Evaluation Board
TQP8M9013-PCB2140 2140 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev H 01/13/11
© 2010 TriQuint Semiconductor, Inc.
- 1 of 23 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TQP8M9013
½ W High Linearity 5V 2-Stage Amplifier
Typical Performance 800-1000 MHz (TQP8M9013-PCB900)
Frequency
Gain [1]
Input Return Loss
Output Return Loss
Output P1dB
OIP3 [2]
Channel Power @ -50 dBc ACLR [3]
Quiescent Current, Icq
Supply Voltage, Vcc
MHz
dB
dB
dB
dBm
dBm
dBm
mA
V
800
29.5
13.1
21.2
+28.4
+41.9
+17.7
850
29.7
13.1
30.0
+28.7
+42.6
+18.1
900
29.8
12.9
23.9
+29.0
+43.0
+18.8
225
+5
950
30.0
12.7
17.6
+28.8
+43.3
+18.4
Notes
1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit.
2. OIP3 is measured at 17 dBm Pout / tone with 1 MHz spacing.
3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
1000
30.1
12.4
13.5
+28.8
+43.4
+18.1
Gain vs. Frequency
25oC
32
31
30
29
28
27
26
25
0.8
0.85 0.9 0.95
Frequency (GHz)
30
28
26
24
22
20
1 0.8
P1dB vs. Frequency
CW, 25oC
www.DataSheet.net/
0.85 0.9 0.95
Frequency (GHz)
Return Loss vs. Frequency
25oC
0
-5
-10
S11
-15
S22
-20
-25
1 0.8
0.85 0.9 0.95
Frequency (GHz)
1
OIP3 vs. Output Power vs. Frequency
1MHz Spacing, 25oC
50
800MHz
950MHz
850MHz
1000MHz
900MHz
45
40
ACLR1 vs. Output Power vs. Frequency
3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC
-40
800MHz
850MHz
900MHz
-45
950MHz
1000MHz
-50
35 -55
30 -60
8 10 12 14 16 18 20
14 15 16 17 18 19 20 21
Output Power / Tone (dBm)
Output Power (dBm)
Data Sheet: Rev H 01/13/11
© 2010 TriQuint Semiconductor, Inc.
- 5 of 23 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TQP8M9013
½ W High Linearity 5V 2-Stage Amplifier
Typical Performance 2110-2170 MHz (TQP8M9013-PCB2140)
Frequency
MHz
2110
2140
Gain [1]
dB 29.8 29.7
Input Return Loss
dB 13.2 13.1
Output Return Loss
dB 10.8 10.7
Output P1dB
dBm +28.0
+28.0
OIP3 [2]
dBm +44.2
+43.7
Channel Power @ -50 dBc ACLR [3]
dBm +18.4
+18.5
Quiescent Current, Icq
mA
225
Supply Voltage, Vcc
V
+5
Notes:
1. Test conditions unless otherwise noted: 25 ºC, +5V, in tuned application circuit.
2. OIP3 is measured at 11 dBm Pout / tone with 1 MHz spacing.
3. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
2170
29.4
12.1
10.5
+28.1
+43.8
+18.6
Gain vs. Frequency vs. Temperature
32
31
30
29
+85 °C
28 +25 °C
−40 °C
27
26
2.1
2.12 2.14 2.16 2.18
Frequency (GHz)
OIP3 vs. Output Power vs. Frequency
1MHz Spacing, 25oC
50
2110MHz
2140MHz
2170MHz
45
S11 vs. Frequency vs. Temperature
0
S22 vs. Frequency vs. Temperature
0
-5 -5
-10 -10
-15
-20
2.2 2.1
+85 °C
+25 °C
−40 °C
2.12
2.14 2.16
Frequency (GHz)www.DataSheet.net/
2.18
-15
-20
2.2 2.1
+85 °C
+25 °C
−40 °C
2.12 2.14 2.16 2.18
Frequency (GHz)
2.2
ACLR1 vs. Output Power vs. Frequency
3GPP WCDMA, TM1+64DPCH, PAR=10.2dB, 5MHz Offset, 25oC
-40
2110MHz
2140MHz
2170MHz
-45
EVM vs. Output Power vs. Frequency
OFDM, QAM-64, 54 Mb/s
4
2110 MHz 2140 MHz 2170 MHz
3
40 -50 2
35 -55 1
30
10
12 14 16 18
Output Power / Tone (dBm)
OIP3 vs. Output Power vs. Temperature
46 Frequency : 2.14 GHz, 1 MHz spacing
-60
20 15
16 17 18
Output Power (dBm)
19
0
20 14 15 16 17 18 19
Output Power (dBm)
ACLR vs. Output Power vs. Temperature
2.14 GHz, 3GPP WCDMA, PAR 10.2 dB, 5MHz Offset
-40
P1dB vs. Frequency vs. Temperature
30
20
44
42
40
38
36
10
+85 °C
+25 °C
−40 °C
12 14 16 18
Output Power / Tone (dBm)
-45
-50
-55
-60
-65
20 12
+85 °C
+25 °C
−40 °C
14 16 18
Output Power / Tone (dBm)
28
+85 °C
26 +25 °C
−40 °C
24
22
20 2.11 2.12 2.13 2.14 2.15 2.16 2.17
Frequency (GHz)
Data Sheet: Rev H 01/13/11
© 2010 TriQuint Semiconductor, Inc.
- 11 of 23 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
| Páginas | Total 23 Páginas | |
| PDF Descargar | [ Datasheet TQP8M9013.PDF ] | |
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