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Número de pieza | TGF2023-01 | |
Descripción | 6 Watt Discrete Power GaN on SiC HEMT | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGF2023-01 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! TGF2023-01
6 Watt Discrete Power GaN on SiC HEMT
Key Features
•
•
•
•
•
Frequency Range: DC - 18 GHz
38 dBm Nominal Psat at 3 GHz
66% Maximum PAE
18 dB Nominal Power Gain at 3 GHz
Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V
••
Typical
Technology: 0.25 um Power GaN on SiC
Chip Dimensions: 0.82 x 0.66 x 0.10 mm
Measured Performance
Bias conditions: Vd = 28 V, Idq = 125 mA, Vg = -3.6 V Typical
Primary Applications
• Defense & Aerospace
• Broadband Wireless
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Product Description
The TriQuint TGF2023-01 is a discrete 1.25 mm
GaN on SiC HEMT which operates from DC-18
GHz. The TGF2023-01 is designed using
TriQuint’s proven 0.25um GaN production process.
This process features advanced field plate
techniques to optimize microwave power and
efficiency at high drain bias operating conditions.
The TGF2023-01 typically provides 38 dBm of
saturated output power with power gain of 18 dB at
3 GHz. The maximum power added efficiency is
66% which makes the TGF2023-01 appropriate for
high efficiency applications.
Lead-free and RoHS compliant
.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Apr 2011 © Rev D
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page TGF2023-01
Median Lifetime vs Channel Temperature
www.DataSheet.net/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Apr 2011 © Rev D
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page TGF2023-01
Complete 1.25 mm GaN HEMT Linear Model
Includes 1 UGC, 2 vias, and 2 bonding pads
Via Holes (2)
Gate
Bonding
Pad
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Γ_load
Drain
Bonding
Pad
S-Parameter
Reference Planes
(.s2p file)
Rp, Cp
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
Apr 2011 © Rev D
11
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet TGF2023-01.PDF ] |
Número de pieza | Descripción | Fabricantes |
TGF2023-01 | 6 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
TGF2023-02 | 12 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
TGF2023-05 | 25 Watt Discrete Power GaN on SiC HEMT | TriQuint Semiconductor |
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