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PDF TGA4532 Data sheet ( Hoja de datos )
| Número de pieza | TGA4532 | |
| Descripción | K Band Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGA4532
K-Band Power Amplifier
Applications
• Point-to-Point Radio
• Communication
Product Features
• Frequency Range: 17.5 – 20 GHz
• Power: 32.5 dBm Psat, 31.5 dBm P1dB
• Gain: 23 dB
• TOI: 43 dBm @ 22 dBm SCL
• Return Loss: 18 dB
• NF: 6 dB
• Integrated Power Detector
• Bias: Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical
• Dimensions: 2.4 x 1.9 x 0.1 mm
General Description
The TriQuint TGA4532 is a K-Band Power Amplifier.
The TGA4532 operates from 17.5 to 20 GHz and is
designed using TriQuint’s power pHEMT production
process.
The TGA4532 typically provides 31.5 dBm of output
power at 1dB gain compression with small signal gain of
23 dB. Third Order Intercept is 43 dBm at 22 dBm SCL.
The TGA4532 is ideally suited for Point-to-Point Radio,
and K-band communications.
Lead-free and RoHS compliant
Functional Block Diagram
Vd Vd Vref
3 74
5 Vdet
RF In 1
6 RF Out
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2
Vg
8
Vg
Bond Pad Configuration
Bond Pad #
1
2, 8
3, 7
4
5
6
Symbol
RF In
Vg
Vd
Vref
Vdet
RF Out
Preliminary Data Sheet: Rev A 03/24/11
© 2011 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
TGA4532
ECCN
Description
3A001.b.2.c K-band Power Amplifier
Standard order qty = 100 pieces.
- 1 of 12 -
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1 page  
TGA4532
K-Band Power Amplifier
Typical Performance (cont.)
IM3 vs. Pout/Tone vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, +25 0C
-10
-15
-20
17.7GHz
-25
18.7GHz
-30
19.7GHz
-35
-40
-45
-50
-55
-60
19 20 21 22 23 24 25 26
Pout/Tone (dBm)
IM5 vs. Pout/Tone vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, +25 0C
-30
-35
-40
17.7GHz
-45
18.7GHz
-50
19.7GHz
-55
-60
-65
-70
-75
-80
19 20 21 22 23 24 25 26
Pout/Tone (dBm)
Noise Figure vs. Frequency
Vd = 6 V, Id = 900 mA, Vg = -0.7 V Typical, +25 0C
10
9
8
7
6
5
4
3
2
1
0
16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21
Frequency (GHz)
Gain vs. Frequency vs. Id
Vd = 6 V, Id = 1.1 - 1.3 A, +25 0C
28
26
24
22 6V 900mA
20 6V 816mA
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18
16
14
12
10
16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21
Frequency (GHz)
P1dB vs. Frequency vs. Id
Vd = 6 V, Id = 730 - 980 mA, +25 0C
34
33
32
31
30 6V 980mA
29 6V 900mA
28 6V 816mA
6V 730mA
27
26
25
16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21
Frequency (GHz)
TOI vs. Frequency vs. Id
Vd = 6 V, Id = 816 - 900 mA, +25 0C
44
43
42
41
6V 900mA
40
39 6V 816mA
38
37
36
35
16 16.5 17 17.5 18 18.5 19 19.5 20 20.5 21
Frequency (GHz)
Preliminary Data Sheet: Rev A 03/24/11
© 2011 TriQuint Semiconductor, Inc.
- 5 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page 
TGA4532
K-Band Power Amplifier
Product Compliance Information
ESD Information
ESD Rating:
Value:
Test:
Standard:
1A
Passes ≥ 250V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ECCN
US Department of Commerce 3A001.b.2.c
Solderability
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
Assembly Notes
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Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e. epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300°C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Data Sheet: Rev A 03/24/11
© 2011 TriQuint Semiconductor, Inc.
- 11 of 12 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
11 Page | ||
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