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PDF TQP3M9035 Data sheet ( Hoja de datos )
| Número de pieza | TQP3M9035 | |
| Descripción | High Linearity LNA Gain Block | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TQP3M9035
High Linearity LNA Gain Block
Applications
• Repeaters
• Mobile Infrastructure
• LTE / WCDMA / CDMA / GSM
• General Purpose Wireless
• TDD or FDD systems
Product Features
50-4000 MHz
0.66 dB Noise Figure @ 1.9 GHz
16.5 dB Gain @ 1.9 GHz
+37.0 dBm Output IP3
• +22.5 dBm P1dB
• Shut-down capability
• Unconditionally stable
• 50 Ohm Cascadable Gain Block
+5V Single Supply, 110 mA Current
2x2mm 8-lead DFN plastic package
2x2mm 8-lead DFN plastic package
Functional Block Diagram
1
RF In 2
3
4
8
7 RF Out
6 Shutdown
5
General Description
The TQP3M9035 is a high linearity low noise gain block
amplifier in a low-cost surface-mount package. At 1.9
GHz, the amplifier typically provides 16.5 dB gain, +37.0
dBm OIP3, and 0.66 dB Noise Figure. The LNA is also
designed to be broadband without the requirement for
external matching. The device is housed in a lead-
free/green/RoHS-compliant industry-standard 2x2mm
package.
Pin Configuration
www.DataSheet.net/
Pin #
1,3,4,5,8
Symbol
N/A
2 RF Input
6 SD (Shutdown)
7 RF Output
The TQP3M9035 has the benefit of having high linearity
while also providing very low noise across a broad range
of frequencies. This allows the device to be used in both
receive and transmit chains for high performance systems.
The amplifier is internally matched using a high
performance E-pHEMT process and only requires an
external RF choke and blocking/bypass capacitors for
operation from a single +5V supply. The low noise
amplifier integrates a shut-down biasing capability to
allow for operation for TDD applications.
Ordering Information
The TQP3M9035 covers the 0.05 - 4 GHz frequency band
and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Part No.
Description
TQP3M9035
High Linearity LNA Gain Block
TQP3M9035-PCB
0.5-4 GHz Evaluation Board
Standard T/R size = 2500 pieces on a 7” reel.
Data Sheet: Rev B 05/10/12
© 2012 TriQuint Semiconductor, Inc.
- 1 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
TQP3M9035
High Linearity LNA Gain Block
Pin Configuration and Description
1
RF In 2
3
4
8
7 RF Out
6 Shutdown
5
Pin
2
6
Symbol
RF IN
SD
7 RF OUT/BIAS
1,3,4,5,8 N/A
Description
RF Input, DC Block Required
Shut-down pin. A high voltage turns off the device. If the pin is not connected or is
less than 1V, then the device will operate under its normal operating condition.
RF Output, 5V DC Bias
Ground or No-connect. No internal connection.
Evaluations Board PCB Specifications
Matirial Stack-Up and Layout
0.010"
0.062" ± 0.006"
Finished Board
Thickness
Rogers 4350B
εr=3.7 typ.
1 oz. Cu top layer
1 oz. Cu inner layer
Rogers 4450F
0.010"
Rogers 4350B
1 oz. Cu inner layer
1 oz. Cu bottom layer
The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB
land pattern has been developed to accommodate lead and
package tolerances. Since surface mount processes vary
from supplier to supplier, careful process development is
recommended.
www.DataSheet.net/
Data Sheet: Rev B 05/10/12
© 2012 TriQuint Semiconductor, Inc.
- 5 of 7 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TQP3M9035.PDF ] | |
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