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PDF AMCC922NE Data sheet ( Hoja de datos )

Número de pieza AMCC922NE
Descripción MOSFET ( Transistor )
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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Analog Power
AMCC922NE
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
20 0.015 @ VGS = 4.5 V
0.018 @ VGS = 2.5V
DFN 3x3
Top View
ID (A)
8.2
7.5
DD
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN 3x3 saves board space
• Fast switching speed
• High performance trench technology
S1 1
G1 2
S2 3
G2 4
8 D G1
G2
7D
6D
S1
S2
5 D N- Ch ann el N-Cha nne l
MOS FET MOSF ET
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet.co.kr
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
IS
TA=25oC
TA=70oC
PD
TJ, Tstg
20
±8
8.2
6.7
±40
1.5
1.5
1.0
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Typ
72
100
Max
83
120
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AMCC922NE_B
Datasheet pdf - http://www.DataSheet4U.net/

1 page




AMCC922NE pdf
Analog Power
AMCC922NE
Package Information
www.DataSheet.co.kr
PRELIMINARY
5 Publication Order Number:
DS-AMCC922NE_B
Datasheet pdf - http://www.DataSheet4U.net/

5 Page










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