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Número de pieza | AM7442N | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM7442N (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Analog Power
N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8PP saves board space
• Fast switching speed
• High performance trench technology
AM7442N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
40 9 @VGS= 10V
12 @VGS= 4.5V
SOIC-8PP
Top View
ID (A)
20
17
D
S1
S2
S3
G4
8D
7D
G
6D
S
5 D N-Channel MOSFET
ABSOLUTE MAXIMUMRATINGS(TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
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Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
40
±20
±20
±16
IDM ±50
IS
TA=25oC
TA=70oC
PD
2.3
5.0
3.2
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMALRESISTANCERATINGS
Parameter
MaximumJunction-to-Ambienta
t <= 10 sec
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJA
Maximum Units
25 oC/W
65 oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM7442_B
Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AM7442N.PDF ] |
Número de pieza | Descripción | Fabricantes |
AM7442N | MOSFET ( Transistor ) | Analog Power |
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