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PDF AM7360N Data sheet ( Hoja de datos )
| Número de pieza | AM7360N | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AM7360N (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Analog Power
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
• Fast switching speed
• High performance trench technology
AM7360N
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
60 22 @ VGS = 10V
26 @ VGS = 4.5V
DFN3x3-8PP
Top View
ID (A)
11
10
D
S1
S2
S3
G4
8D
7D
G
6D
S
5 D N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
www.DataSheet.co.kr
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
60
±20
±11
±8
IDM ±75
IS
TA=25oC
TA=70oC
PD
16
3.5
2
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
Maximum Junction-to-Ambienta
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
25
50
Units
oC/W
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM7360_A
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM7360N.PDF ] | |
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