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PDF AM4533C Data sheet ( Hoja de datos )

Número de pieza AM4533C
Descripción MOSFET ( Transistor )
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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Analog Power
AM4533C
P & N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
20 40 @ VGS = 2.5V
31 @ VGS = 4.5V
-20 80 @ VGS = -2.5V
52 @ VGS = -4.5V
ID (A)
6.0
6.9
-4.2
-5.2
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
18
27
36
45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Currenta
VGS
www.DataSheet.co.kr
TA=25oC
TA=70oC
ID
Pulsed Drain Currentb
IDM
Continuous Source Current (Diode Conduction)a
IS
Power Dissipationa
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range TJ, Tstg
20 -20
±8 ±8
6.9 -5.2
5.4 -6.8
20 -20
1.3 -1.3
2.1 2.1
1.3 1.3
-55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady-State
Symbol
RθJA
Maximum
62.5
110
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM4533_F
Datasheet pdf - http://www.DataSheet4U.net/

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