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PDF AM2392N Data sheet ( Hoja de datos )
| Número de pieza | AM2392N | |
| Descripción | N-Channel 150-V (D-S) MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
AM2392N
N-Channel 150V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
150 2.6 @ VGS = 10 V
2.8 @ VGS = 5.5V
ID (A)
0.6
0.5
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
www.DataSheet.co.kr
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
150
V
VGS ±20
Continuous Drain Currenta
Pulsed Drain Currentb
TA=25oC ID
IDM
0.6 A
±10
Continuous Source Current (Diode Conduction)a
IS 1.1 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC PD
1.30
TJ, Tstg -55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady State
Symbol
RthJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Typ
93
130
Max
110
150
oC/W
PRELIMINARY
1 Publication Order Number:
DS-AM2392_A
Datasheet pdf - http://www.DataSheet4U.net/
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AM2392N.PDF ] | |
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