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PDF AM2308NE Data sheet ( Hoja de datos )

Número de pieza AM2308NE
Descripción N-Channel 30-V (D-S) MOSFET
Fabricantes Analog Power 
Logotipo Analog Power Logotipo



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No Preview Available ! AM2308NE Hoja de datos, Descripción, Manual

Analog Power
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
AM2308NE
PRODUCT SUMMARY
VDS (V)
rDS(on) m()
30 60 @ VGS = 4.5V
82 @ VGS = 2.5V
ID (A)
3.5
3.0
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
G
D
S
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
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Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
30
±12
3.5
2.8
IDM 16
IS
TA=25oC
TA=70oC
PD
1.25
1.25
0.8
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 10 sec
Steady-State
Symbol
RθJA
Maximum
100
166
Units
oC/W
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1 Publication Order Number:
DS-AM2308NE_B
Datasheet pdf - http://www.DataSheet4U.net/

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AM2308NE pdf
Analog Power
AM2308NE
Package Information
www.DataSheet.co.kr
PRELIMINARY
5 Publication Order Number:
DS-AM2308NE_B
Datasheet pdf - http://www.DataSheet4U.net/

5 Page










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