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Número de pieza | AM2305P | |
Descripción | P-Channel 20-V (D-S) MOSFET | |
Fabricantes | Analog Power | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM2305P (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
AM2305P
PRODUCTSUMMARY
VDS (V) rDS(on) (OHM)
0.043 @VGS= -4.5V
-20 0.054 @VGS= -2.5V
0.120 @VGS= -1.8V
ID (A)
-4.5
-4.0
-2.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
www.DataSheet.co.kr
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-20
±8
-4.5
-3.6
-10
Power Dissipationa
TA=25oC
TA=70oC
PD
1.25
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol
RTHJA
Maximum
100
150
Units
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
PRELIMINARY
1
Publication Order Number:
DS-AM2305P_A
Datasheet pdf - http://www.DataSheet4U.net/
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet AM2305P.PDF ] |
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