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Número de pieza | WFSA5510 | |
Descripción | N- Channel and P-Channel Silicon MOSFETs | |
Fabricantes | Winsemi | |
Logotipo | ||
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N- Channel and P-Channel Silicon MOSFETs
Features
■ Low On resistance.
■ Composite type with an N-channel MOSFET and a
P-channel MOSFET driving from a 4.5V/-4.5V
supply voltage contained in a single package.
■ High-density mounting.
■ Zener-Protected
■ RoHS compliant.
Applications
■ Ultrahigh Speed Switching,
■ Motor Driver Applications
SOP-8
www.DataSheet.co.kr
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
PW≤10uS, duty cycle≤1%
Mounted on a ceramic board
(1000mm2×0.8mm) 1unit
Mounted on a ceramic board
(1000mm2×0.8mm)
Maximum Junction Temperature
Storage Temperature Range
Ratings
N-Ch P-Ch
100 -100
+20 +20
2 -2
8 -8
1.3
1.7
150
-55~+150
Unit
V
V
A
A
W
W
0C
0C
Rev.A Feb.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Datasheet pdf - http://www.DataSheet4U.net/
1 page WFSA5510
P-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(ON)
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-250uA, VGS=0V
VDS=-80V, VGS=0V
VGS=+16V, VDS=0V
VDS= VGS, ID=-250uA
ID=-2A, VGS=-10V
ID=-1.5A, VGS=-4V
VDS=-30V,
VGS=0V,
f=1MHz
VGEN=-10V,
VDS=-30V,
RL=30Ω, ID=1A,
RGEN=6Ω
VDS=-50V,
VGS=-10V,
ID=-2A
IS=-2.5A, VGS=0V
Ratings
min typ max
-100 -
-
- - -1
- - +10
-1.2 -1.8 -2.6
- 176 225
- 225 315
- 1050
-
- 70
-
- 40
-
- 9 17
- 10 19
- 81 147
- 82 149
- 21.3 30
- 3.2
-
- 4.5
-
- -0.75 -1.3
Unit
V
uA
nA
V
mΩ
mΩ
pF
nS
nC
V
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Steady, keep you advance
5/10
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet WFSA5510.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFSA5510 | N- Channel and P-Channel Silicon MOSFETs | Winsemi |
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