|
|
PDF SP8K80 Data sheet ( Hoja de datos )
| Número de pieza | SP8K80 | |
| Descripción | 10V Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SP8K80 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Data Sheet
10V Drive Nch MOSFET
SP8K80
Structure
Silicon N-channel MOSFET
Features
1) Built-in G-S protection diode.
2) Small surface mount package(SOP8).
Application
Switching
Dimensions (Unit : mm)
SOP8
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain (1) (2) (3) (4)
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
SP8K80
Taping
TB
2500
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
IDP *1
IS *3
ISP *1
IAS *2
EAS *2
PD *4
Tch
Tstg
500
30
0.5
2
0.5
2
0.25
0.017
2
0.2
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Inner circuit
(8) (7) (6) (5)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2 ∗2
∗1 ∗1
(1) (2) (3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
SP8K80
Data Sheet
Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse:1unit
1
0.1
0.01
0.001
0.0001 0.001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=89.3°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1 1 10 100 1000
Pulse width : Pw (s)
1000
Fig.15 Reverse Recovery Time vs. Source Current
Ta=25°C
di/dt=50A/μs
VGS=0V
Pulsed
Fig.14 Maximum Safe Operating Area
10
Operation in this area
is limited by RDS(on)
(VGS = 10V)
1
PW = 100μs
0.1
0.01
Ta=25°C
Single Pulse:1unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.001
0.1 1 10
100
Drain-Source Voltage : VDS [ V ]
PW = 1ms
PW = 10ms
DC operation
1000
100
www.DataSheet.co.kr
10
0.1
Source Current : IS [A]
1
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SP8K80.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SP8K80 | 10V Drive Nch MOSFET | ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |