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PDF SW3N80 Data sheet ( Hoja de datos )
| Número de pieza | SW3N80 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | Samwin | |
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SAMWIN
SW3N80
N-channel MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 4.5 Ω)@VGS=10V
■ Gate Charge (Typ 26nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220F
TO-220
12 3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
BVDSS : 800V
ID : 3.0A
RDS(ON) : 4.5ohm
2
1
3
Order Codes
Item
1
2
Sales Type
SW P 3N80
SW F 3N80
Absolute maximum ratings
Marking
SW3N80
SW3N80
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
(note 1)
(note 2)
(note 1)
(note 3)
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Value
TO-220
TO-220F
800
3.0 3.0*
1.9 1.9*
12
± 30
310
10
4.5
106 39*
0.8 0.31
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Value
TO-220
TO-220F
1.18 3.18
0.5
62.5
Unit
oC/W
oC/W
oC/W
Mar. 2011. Rev. 2.0
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
SAMWIN
SW3N80
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VDS
DUT
VGS
QGS
QG
QGD
Charge
Fig. 13. Switching time test circuit & waveform
RG
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Fig. 14. Unclamped Inductive switching test circuit & waveform
10VIN
RG
L
IAS
VDS
DUT
VDD
BVDSS
IAS
EAS =
1
2 L X IAS2 X
BVDSS
BVDSS - VDD
ID(t)
tp
VDS(t)
time
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
5/7
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SW3N80.PDF ] | |
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