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PDF PSMN4R5-40PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN4R5-40PS | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1
- - 40 V
- - 100 A
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 148 W
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 25 A;
VDS = 20 V; see Figure 14;
see Figure 15
- 8.8 - nC
Static characteristics
RDSon drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13;
[1] -
3.9 4.6 mΩ
[1] Measured 3 mm from package.
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NXP Semiconductors
PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 11; see Figure 12
36 -
40 -
--
-V
-V
4.6 V
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 11; see Figure 12
1- - V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 11; see Figure 12
234V
IDSS
IGSS
RDSon
RG
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C; see
Figure 13
-
-
-
-
-
VGS = 10 V; ID = 25 A; Tj = 25 °C; see
Figure 13;
[1] -
internal gate resistance f = 1 MHz
(AC)
-
-3
- 60
- 100
- 100
- 6.7
3.9 4.6
0.97 -
µA
µA
nA
nA
mΩ
mΩ
Ω
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 20 V; VGS = 10 V; see
Figure 14; see Figure 15
- 35 - nC
- 42.3 - nC
QGS
QGS(th)
gate-source charge
pre-threshold
gate-source charge
ID = 25 A; VDS = 20 V; VGS = 10 V; see
Figure 14; see Figure 15
- 13.8 - nC
- 7.9 - nC
QGS(th-pl) post-threshold
gate-source charge
- 5.9 - nC
QGD
VGS(pl)
gate-drain charge
gate-source plateau
voltage
ID = 25 A; VDS = 20 V; see Figure 14
- 8.8 - nC
- 4.8 - V
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 12 V; RL = 0.5 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
- 2683 - pF
- 660 - pF
- 290 - pF
- 19 - ns
- 23 - ns
- 30 - ns
- 9 - ns
PSMN4R5-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
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NXP Semiconductors
PSMN4R5-40PS
N-channel 40 V 4.6 mΩ standard level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
PSMN4R5-40PS_2
Modifications:
20090625
Product data sheet
-
• Data sheet status changed from objective to product.
• Various changes to content.
PSMN4R5-40PS_1
20090507
Objective data sheet -
Supersedes
PSMN4R5-40PS_1
-
PSMN4R5-40PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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