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PDF PSMN4R3-80ES Data sheet ( Hoja de datos )
| Número de pieza | PSMN4R3-80ES | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Rev. 02 — 18 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switch
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
drain-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Tj junction temperature
Static characteristics
RDSon
drain-source
on-state resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 13
VGS = 10 V; ID = 25 A;
Tj = 100 °C; see Figure 12
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A;
VDS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C;
ID = 120 A; Vsup ≤ 80 V;
RGS = 50 Ω; unclamped
Min Typ Max Unit
- - 80 V
[1] - - 120 A
- - 306 W
-55 -
175 °C
[2] -
[2] -
3.7 4.3 mΩ
6.1 7.1 mΩ
- 28 - nC
- 111 - nC
- - 676 mJ
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
Vertical in free air
Min Typ Max Unit
- 0.22 0.49 K/W
- 60 - K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
10-2
0.02
003aaf629
P δ = tp
T
single shot
tp t
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 April 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
7. Package outline
Plastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT226
D1 E
D
b1
L
L1
123
ee
b
A
A1
mounting
base
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
b1
c
D
max
D1
E
e
L
L1 Q
mm 4.5 1.40 0.85 1.3 0.7
4.1 1.27 0.60 1.0 0.4
11
1.6
1.2
10.3
9.7
2.54
15.0
13.5
3.30
2.79
2.6
2.2
OUTLINE
VERSION
SOT226
IEC
REFERENCES
JEDEC
JEITA
TO-262
EUROPEAN
PROJECTION
Fig 18. Package outline SOT226 (I2PAK)
ISSUE DATE
06-02-14
09-08-25
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 April 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
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