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PDF PSMN4R3-100PS Data sheet ( Hoja de datos )
| Número de pieza | PSMN4R3-100PS | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Rev. 1 — 27 October 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current limited by package
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V;
see Figure 1
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 100 V
[1] - - 120 A
--
-55 -
338 W
175 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 13
-
[2] -
6.6 7.8 mΩ
3.7 4.3 mΩ
VGS = 10 V; ID = 75 A; VDS = 50 V; - 49 - nC
see Figure 14; see Figure 15
- 170 - nC
VGS = 10 V; Tj(init) = 25 °C;
ID = 120 A; Vsup ≤ 100 V;
RGS = 50 Ω; Unclamped
- - 537 mJ
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NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 4
vertical in free air
Min Typ Max Unit
- 0.22 0.44 K/W
- 60 - K/W
003aaf733
1
Zth(j-mb)
(K/W)
d = 0.5
10-1
0.2
0.1
0.05
10-2
0.02
P = tp
T
single shot
tp t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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NXP Semiconductors
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
EA
p A1
q mounting
D1 base
D
L1(1)
b1(2)
L (3×)
b2(2)
(2×)
L2(1)
1 23
ee
b(3×)
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1(2) b2(2) c
D D1 E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7 1.40 0.9
4.1 1.25 0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
SOT78
3-lead TO-220AB
SC-46
Fig 18. Package outline SOT78 (TO-220AB)
ISSUE DATE
08-04-23
08-06-13
PSMN4R3-100PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 27 October 2011
© NXP B.V. 2011. All rights reserved.
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