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PDF PSMN1R6-30PL Data sheet ( Hoja de datos )
| Número de pieza | PSMN1R6-30PL | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
Rev. 02 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switiching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 30 V
ID drain current
Tmb = 25 °C; VGS = 10 V; [1] - - 100 A
see Figure 1;
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
- - 306 W
Dynamic characteristics
QGD
gate-drain charge VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14;
see Figure 15
- 27 - nC
QG(tot) total gate charge
Static characteristics
VGS = 4.5 V; ID = 25 A;
VDS = 15 V; see Figure 14
- 101 - nC
RDSon
drain-source
VGS = 10 V; ID = 25 A;
on-state resistance Tj = 25 °C;
[2] -
1.4 1.7 mΩ
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
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NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source
breakdown voltage
gate-source threshold
voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 11; see Figure 12
30 - - V
27 - - V
1.3 1.7 2.15 V
ID = 1 mA; VDS = VGS; Tj = 175 °C; see
Figure 12
0.5 - - V
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 12
- - 2.45 V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 25 A; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 100 °C; see
Figure 13
-
-
-
-
-
-
RG gate resistance
Dynamic characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
f = 1 MHz
[1] -
-
-5
- 150
- 100
- 100
1.6 2.1
- 2.3
1.4 1.7
0.98 -
µA
µA
nA
nA
mΩ
mΩ
mΩ
Ω
QG(tot)
total gate charge
ID = 25 A; VDS = 15 V; VGS = 10 V; see
Figure 14; see Figure 15
- 212 - nC
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14
- 193 - nC
- 101 - nC
QGS
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14; see Figure 15
- 33 - nC
QGS(th)
pre-threshold
gate-source charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14
- 20 - nC
QGS(th-pl) post-threshold
gate-source charge
- 13 - nC
QGD
gate-drain charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V; see
Figure 14; see Figure 15
- 27 - nC
VGS(pl)
gate-source plateau
voltage
VDS = 15 V; see Figure 14
- 2.5 - V
Ciss
Coss
Crss
input capacitance
output capacitance
reverse transfer
capacitance
VDS = 12 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
- 12493 - pF
- 2486 - pF
- 1034 - pF
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 13
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NXP Semiconductors
PSMN1R6-30PL
N-channel 30 V 1.7 mΩ logic level MOSFET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
PSMN1R6-30PL_2
Modifications:
20090625
Product data sheet
-
• Data sheet status changed from objective to product.
• Various content changes.
PSMN1R6-30PL_1
20090518
Objective data sheet -
Supersedes
PSMN1R6-30PL_1
-
PSMN1R6-30PL_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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