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PDF PSMN0R9-25YLC Data sheet ( Hoja de datos )
| Número de pieza | PSMN0R9-25YLC | |
| Descripción | N-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 2 — 4 July 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High reliability Power SO8 package,
qualified to 175°C
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
Ultra low QG, QGD and QOSS for high
system efficiencies at low and high
loads
Ultra low Rdson and low parasitic
inductance
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Power OR-ing
Server power supplies
Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
25 °C ≤ Tj ≤ 175 °C
Tmb = 25 °C; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 4.5 V; ID = 25 A;
Tj = 25 °C; see Figure 12
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 12
Min Typ Max Unit
- - 25 V
[1] - - 100 A
- - 272 W
-55 -
175 °C
- 0.95 1.25 mΩ
- 0.75 0.99 mΩ
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NXP Semiconductors
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 5
Min Typ Max Unit
- 0.45 0.55 K/W
1
Zth(j-mb) = 0.5
(K/W)
003a af 523
10-1 0.2
0.1
0.05
0.02
10-2
P = tp
T
s ingle s hot
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
t
10-1 tp (s ) 1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN0R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
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NXP Semiconductors
PSMN0R9-25YLC
N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
7. Package outline
Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads
SOT669
L1
HD
E
A
A2
C
b2 c2
mounting
base
D1
L2
1 2 34
e b wM A
1/2 e
X
c
E1
b3
b4
A
A1 C
detail X
(A3)
θ
L
yC
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 A2 A3
b
b2 b3 b4
c
c2
D (1)
D1(1)
max
E(1)
E1(1)
e
H
L L1
mm
1.20
1.01
0.15
0.00
1.10
0.95
0.25
0.50
0.35
4.41
3.62
2.2
2.0
0.9
0.7
0.25
0.19
0.30
0.24
4.10
3.80
4.20
5.0
4.8
3.3
3.1
1.27
6.2
5.8
0.85
0.40
1.3
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
L2 w y
1.3
0.8
0.25
0.1
θ
8°
0°
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT669
MO-235
EUROPEAN
PROJECTION
ISSUE DATE
06-03-16
11-03-25
Fig 19. Package outline SOT669 (LFPAK; Power-SO8)
PSMN0R9-25YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 4 July 2011
© NXP B.V. 2011. All rights reserved.
11 of 15
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