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PDF SI8499DB Data sheet ( Hoja de datos )
| Número de pieza | SI8499DB | |
| Descripción | P-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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P-Channel 20 V (D-S) MOSFET
Si8499DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.032 at VGS = - 4.5 V
- 20 0.046 at VGS = - 2.5 V
0.065 at VGS = - 2.0 V
0.120 at VGS = - 1.8 V
ID (A)e
- 16
- 14.3
- 12
- 2.5
Qg (Typ.)
14.5 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra-small 1.5 mm x 1 mm Maximum Outline
• Ultra-thin 0.59 Maximum Height
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low On-Resistance Load Switch, Charger Switch and
Battery Switch for Portable Devices
- Low Power Consumption
- Increased Battery Life
S
SS
36
G
DD
45
Device Marking: 8499
xxx = Date/Lot Traceability Code
D
Ordering Information: Si8499DB-T2-E1 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Package Reflow Conditionsc
IR/Convection
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. Case is defined as the top surface of the package.
e. Based on TC = 25 °C.
Limit
- 20
± 12
- 16
- 13.7
- 7.8a, b
- 6.3a, b
- 20
- 10.8
- 2.3a, b
13
8.4
2.77a, b
1.77a, b
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
1
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1 page  
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Si8499DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.12
TJ = 150 °C
10
0.10
0.08
ID = - 1.5 A
0.06
TJ = 25 °C
1 0.04
TJ = 125 °C
0.02
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
0.9
ID = 250 μA
0.8
25
20
0.7 15
0.6 10
0.5 5
0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001 0.01 0.1
1 10 100 1000
Pulse (s)
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
10 ms
0.1 TA = 25 °C
Single Pulse
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65906
S10-0543-Rev. A, 08-Mar-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SI8499DB.PDF ] | |
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