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PDF SI8497DB Data sheet ( Hoja de datos )
| Número de pieza | SI8497DB | |
| Descripción | P-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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P-Channel 30 V (D-S) MOSFET
Si8497DB
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.053 at VGS = - 4.5 V
- 30 0.071 at VGS = - 2.5 V
0.120 at VGS = - 2.0 V
ID (A)d
- 13
- 11
-5
Qg (Typ.)
16.3 nC
MICRO FOOT
Bump Side View
Backside View
SG
21
SS
36
DD
45
Device Marking: 8497
xxx = Date/Lot Traceability Code
Ordering Information: Si8497DB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Ultra-small 1.5 mm x 1 mm Maximum Outline
• Ultra-thin 0.59 Maximum Height
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low On-Resistance Load Switch, Charger Switch,
OVP Switch and Battery Switch for Portable
Devices
- Low Power Consumption
- Increased Battery Life
- Space Savings on PCB
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Package Reflow Conditionsc
IR/Convection
TJ, Tstg
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.
d. Based on TC = 25 °C.
Limit
- 30
± 12
- 13
- 10
- 5.9a, b
- 4.7a, b
- 20
- 11
- 2.3a, b
13
8.4
2.77a, b
1.77a, b
- 55 to 150
260
Unit
V
A
W
°C
Document Number: 63355
www.vishay.com
S11-1385-Rev. A, 11-Jul-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.16
10 TJ = 150 °C
TJ = 25 °C
1
0.12
0.08
0.04
Si8497DB
Vishay Siliconix
ID = 1.5 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.0
0.9
0.8
0.7
0.6 ID = 250 μA
0.5
0.4
0.3
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
30
25
20
15
10
5
0
0.001 0.01 0.1
1 10
Pulse (s)
100 1000
Single Pulse Power, Junction-to-Ambient
10
100 us
1 1 ms
0.1
TA = 25 °C
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 63355
www.vishay.com
S11-1385-Rev. A, 11-Jul-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SI8497DB.PDF ] | |
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