|
|
Número de pieza | SI4666DY | |
Descripción | N-Channel 25 V (D-S) MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SI4666DY (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! www.DataSheet.co.kr
N-Channel 25 V (D-S) MOSFET
Si4666DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
25
RDS(on) (Ω)
0.010 at VGS = 10 V
0.011 at VGS = 4.5 V
0.014 at VGS = 2.5 V
ID (A)a
16.5
15.8
14
Qg (Typ.)
10.7 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
APPLICATIONS
• Synchronous Buck Converter
• DC/DC Converter
D
G
Top View
Ordering Information: Si4666DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
25
± 12
16.5
9.3
11.5b,c
9.4b,c
40
4.5
2.3b,c
15
11.25
5
3.2
2.50b,c
1.6b,c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
t ≤ 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 66587
S10-1044-Rev. A, 03-May-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
Si4666DY
Vishay Siliconix
16
12
8
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6.0 2.0
4.8 1.6
3.6 1.2
2.4 0.8
1.2 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66587
S10-1044-Rev. A, 03-May-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SI4666DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI4666DY | N-Channel 25 V (D-S) MOSFET | Vishay |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |