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PDF SI4622DY Data sheet ( Hoja de datos )
| Número de pieza | SI4622DY | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4622DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
RDS(on) (Ω)
30 0.0160 at VGS = 10 V
0.0186 at VGS = 4.5 V
30 0.0264 at VGS = 10 V
0.0290 at VGS = 4.5 V
ID (A)a
8.0e
8.0e
8.0e
8.0e
Qg (Typ.)
19
6
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET®
Power MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
APPLICATIONS
• Notebook Logic DC-DC
• Low Current DC-DC
D1
D2
G1
Schottky Diode
G2
Top View
Ordering Information: Si4622DY-T1-E3 (Lead (Pb)-free)
Si4622DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30 30
± 20
± 16
8e
8e
8b, c, e
7.2b, c
8e
6.7
6.7b, c
5.3b, c
60 30
2.8 2.6
1.8b, c
1.7b, c
25 15
31.2 11.2
3.3 3.1
2.1 2.0
2.2b, c
1.4b, c
2.0b, c
1.3b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
RthJA
RthJF
45 56
29 38
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Channel-2
Typ. Max.
55 62.5
33 40
Unit
°C/W
Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
1
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New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.030
TJ = 150 °C
10
0.026
0.022
TJ = 25 °C
1
0.018
0.014
Si4622DY
Vishay Siliconix
ID = 9.6 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
10-1
0.010
0 4 8 12 16 20
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
10-2
10-3
10-4
10-5
30 V
20 V
10 V
30
20
10
10-6
0
25 50 75 100 125
TJ - Temperature (°C)
Reverse Current (Schottky)
150
0
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
100 µs
1 ms
1 10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS
Limited
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
5
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New Product
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si4622DY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10-4
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68695.
Document Number: 68695
S09-0764-Rev. B, 04-May-09
www.vishay.com
11
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