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PDF SI5906DU Data sheet ( Hoja de datos )
| Número de pieza | SI5906DU | |
| Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Si5906DU
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.031 at VGS = 10 V
30
0.040 at VGS = 4.5 V
ID (A)a
6
6
Qg (Typ.)
8 nC
PowerPAK ChipFET Dual
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
3.0 mm
1.8 mm
APPLICATIONS
Marking Code
• Network
D1
• System Power DC/DC
D2
CD XXX
Lot Traceability
and Date Code
Part # Code
G1
G2
Bottom View
Ordering Information: Si5906DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
6a
6a
6a, b, c
5.3b, c
25
6a
1.9b, c
10.4
6.7
2.3b, c
1.5b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
43
9.5
55 °C/W
12
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
www.vishay.com
1
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New Product
Si5906DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
16 12
10
12
8
8
Package Limited
4
6
4
2
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI5906DU.PDF ] | |
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