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Número de pieza | SI5519DU | |
Descripción | N- and P-Channel 20-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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Si5519DU
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 20
0.036 at VGS = 4.5 V
0.063 at VGS = 2.5 V
0.064 at VGS = - 4.5 V
P-Channel - 20
0.095 at VGS = - 2.5 V
ID (A)a Qg (Typ.)
6.0
5.4 nC
6.0
- 6.0
- 6.0
6.0 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFETs
APPLICATIONS
• Portable DC-DC Applications
RoHS
COMPLIANT
PowerPAK ChipFET Dual
1
D1 S2
S1 2
D1
8 D1
7
6
G1
D2
D2
5
3
S2 4
G2
G1
Marking Code
EB XXX
Lot Traceability
and Date Code
S1
G2
D2
Bottom View
Part #
Code
Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
6.0a
6.0a
6.0a, b, c
4.9b, c
- 6.0a
- 6.0a
- 4.8b, c
- 3.8b, c
25
6.0a
1.9b, c
- 20
- 6.0a
- 1.9b, c
10.4 10.4
6.6
2.27b, c
1.45b, c
6.6
2.27b, c
1.45b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
43 55 43 55
9.5 12 9.5 12
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
Si5519DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10
TJ = 150 °C
1
0.1 TJ = 25 °C
0.08
0.06
0.04
ID = 5 A
TA = 125 °C
TA = 25 °C
0.01 0.02
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.6
0.00
12345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
ID = 250 µA
1.4
25
20
1.2
15
1.0
10
0.8
5
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1 1 10
Time (s)
Single Pulse Power
100
1000
100
Limited by RDS(on)*
10
10 ms
100 ms
1
1s
10 s
0.1 DC
0.01
BVDSS Limited
TA = 25 °C
Single Pulse
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page www.DataSheet.co.kr
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si5519DU
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 87 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.05
0.1
0.01
0.0001
Single Pulse
0.02
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74406.
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
www.vishay.com
11
Datasheet pdf - http://www.DataSheet4U.net/
11 Page |
Páginas | Total 12 Páginas | |
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Número de pieza | Descripción | Fabricantes |
SI5519DU | N- and P-Channel 20-V (D-S) MOSFET | Vishay Siliconix |
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