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PDF SI5513CDC Data sheet ( Hoja de datos )
| Número de pieza | SI5513CDC | |
| Descripción | N- and P-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si5513CDC
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 20
0.055 at VGS = 4.5 V
0.085 at VGS = 2.5 V
0.150 at VGS = - 4.5 V
P-Channel - 20
0.255 at VGS = - 2.5 V
ID (A)a
4g
4g
- 3.7
- 2.9
Qg (Typ.)
2.6 nC
3.6 nC
1206-8 ChipFET®
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
1 D1 S2
S1
D1 G1
D1 S2
D2 G2
D2
Marking Code
EG XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5513CDC-T1-E3 (Lead (Pb)-free)
Si5513CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
4g
4g
4b, c, g
3.5b, c
10
- 3.7
- 3.0
- 2.4b, c
- 1.9b, c
-8
2.6
1.4b, c
3.1
- 2.6
- 1.7b, c
3.1
2.0 2.0
1.7b, c
1.1b, c
1.3b, c
0.8b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
RthJA
RthJF
62 74 77 95
32 40 33 40
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 115 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10
TJ = 150 °C
TJ = 25 °C
1
0.08
0.06
0.04
0.02
Si5513CDC
Vishay Siliconix
ID = 4.4 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.3
1.1
0.9
ID = 250 µA
0.7
0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0.00
0 2 4 6 8 10 12
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
10-4
10-3
10-2
10-1
Time (s)
Single Pulse Power
1
10
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
Limited by RDS(on)*
10
100 µs
1 1 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
10 ms
100 ms
1 s, 10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
Si5513CDC
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 105 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.1
0.02
Single Pulse
0.05
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68806.
Document Number: 68806
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
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