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PDF SI5504DC Data sheet ( Hoja de datos )
| Número de pieza | SI5504DC | |
| Descripción | Complementary 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si5504DC
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
-30
1206-8 ChipFET
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
rDS(on) (W)
0.085 @ VGS = 10 V
0.143 @ VGS = 4.5 V
0.165 @ VGS = -10 V
0.290 @ VGS = -4.5 V
ID (A)
"3.9
"3.0
"2.8
"2.1
D1
G1
Marking Code
EA XX
Lot Traceability
and Date Code
Part # Code
S1
N-Channel MOSFET
Ordering Information: Si5504DC-T1
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
"3.9
"2.8
1.8
2.1
1.1
30
"20
"2.9
"2.8
"2.1
"2.0
"10
0.9 -1.8
1.1 2.1
0.6 1.1
-55 to 150
260
-30
"2.1
"1.5
-0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
N−CHANNEL
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 10 thru 7 V
6V
8 5V
10
8
66
4 4V 4
1 10
P−CHANNEL
Transfer Characteristics
TC = -55_C
25_C
125_C
2
0
0.0
0.4
0.3
3V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
3.0
0.2
VGS = 10 V
0.1
0.0
0
2468
ID - Drain Current (A)
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
10
2
0
0
400
12345
VGS - Gate-to-Source Voltage (V)
Capacitance
6
320 Ciss
240
160
Coss
80
Crss
0
0
6
12 18 24
VDS - Drain-to-Source Voltage (V)
30
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Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI5504DC.PDF ] | |
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