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PDF SI1016CX Data sheet ( Hoja de datos )
| Número de pieza | SI1016CX | |
| Descripción | Complementary N- and P-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Si1016CX
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.396 at VGS = 4.5 V
0.456 at VGS = 2.5 V
N-Channel 20
0.546 at VGS = 1.8 V
0.760 at VGS = 1.5 V
0.756 at VGS = - 4.5 V
P-Channel
- 20 1.038 at VGS = - 2.5 V
1.440 at VGS = - 1.8 V
2.4 at VGS = - 1.5 V
ID (A) Qg (Typ.)
0.5
0.2
0.75 nC
0.2
0.05
- 0.35
- 0.35
- 0.1
1 nC
- 0.05
SOT-563
SC-89
S1 1
6 D1
G1 2
5 G2 Marking Code: 5
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• High-Side Switching
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Typical ESD Protection: N-Channel 1500 V
P-Channel 1000 V (HBM)
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch, Small Signal Switches and Level-Shift
Switches
- Battery Operated Systems
- Portable
D1 S2
G1
G2
D2 3
4 S2
Top View
Ordering Information: Si1016CX-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
20
0.6a, b
0.49a, b
- 20
±8
- 0.6a, b
- 0.49a, b
Pulsed Drain Current (t = 300 µs)
Source Drain Current Diode Current
Maximum Power Dissipation
TA = 25 °C
TA = 25 °C
TA = 70 °C
IDM
IS
PD
2
0.18a, b
0.22a, b
0.14a, b
- 1.5
- 0.18a, b
0.22a, b
0.14a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 675 °C/W.
t5s
Steady State
Symbol
RthJA
N-Channel
Typ. Max.
470 565
560 675
P-Channel
Typ. Max.
470 565
560 675
Unit
°C/W
Document Number: 67535
www.vishay.com
S11-0655-Rev. A, 11-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
New Product
Si1016CX
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
ID = 0.6 A
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
2
0
0 0.5 1
Qg - Total Gate Charge (nC)
Gate Charge
1.5
1.6
ID = 0.5 A
1.4
VGS = 4.5 V
1.2
1.0
0.8
VGS = 2.5 V
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
10 0.8
ID = 0.5 A
0.6
TJ = 150 °C
1
TJ = 25 °C
TJ = 125 °C
0.4
TJ = 25 °C
0.2
0.1
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
1.5
Soure-Drain Diode Forward Voltage
0.75
0.65
ID = 250 μA
0.55
0.45
0.35
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.7
2.25
1.8
1.35
0.9
0.45
0
0.01
0.1
1
10 100
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 67535
www.vishay.com
S11-0655-Rev. A, 11-Apr-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
Application Note 826
Vishay Siliconix
Return to Index
Return to Index
0.012
(0.300)
0.051
(0.201)
0.020
(0.500)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Document Number: 72605
Revision: 21-Jan-08
www.vishay.com
21
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SI1016CX.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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