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PDF SI1012CR Data sheet ( Hoja de datos )
| Número de pieza | SI1012CR | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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N-Channel 20 V (D-S) MOSFET
Si1012CR
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.396 at VGS = 4.5 V
20 0.456 at VGS = 2.5 V
0.546 at VGS = 1.8 V
ID (A)
0.5
0.2
0.2
Qg (Typ.)
0.75
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Gate-Source ESD Protected: 1000 V
• Compliant to RoHS Directive 2002/95/EC
SC-75A
APPLICATIONS
• Load/Power Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
G1
S2
3D
Marking Code
K XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
±8
0.63a, b
0.5a, b
2
0.2a, b
0.24a, b
0.15a, b
- 55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
t 5 s
Steady State
Symbol
RthJA
Typical
440
540
Maximum
530
650
Unit
°C/W
Document Number: 67519
S11-0449-Rev. A, 07-Mar-11
www.vishay.com
1
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.24
Si1012CR
Vishay Siliconix
Limited by RDS(on)*
1
BVDSS Limited
1 ms
10 ms
0.1
100 ms
TC = 25 °C
Single Pulse
0.01
0.1
1
1s
10 s, DC
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
0.18
0.12
0.06
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 650 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67519.
Document Number: 67519
S11-0449-Rev. A, 07-Mar-11
www.vishay.com
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI1012CR.PDF ] | |
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