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PDF SI4124DY Data sheet ( Hoja de datos )
| Número de pieza | SI4124DY | |
| Descripción | N-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4124DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0075 at VGS = 10 V
40
0.009 at VGS = 4.5 V
ID (A)d
20.5
18.7
Qg (Typ.)
21 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4124DY-T1-E3 (Lead (Pb)-free)
Si4124DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Synchronous Rectification
• DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
40
± 20
20.5
16.4
13.6a, b
10.9a, b
50
33
54
4.7
2.1a, b
5.7
3.6
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
1
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1 page  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
Si4124DY
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*, Junction-to-Foot
7.0 1.80
5.6 1.44
4.2 1.08
2.8 0.72
1.4 0.36
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0.00
0
25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
5
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