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Número de pieza | SI4122DY | |
Descripción | N-Channel 40-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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Si4122DY
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0045 at VGS = 10 V
40
0.006 at VGS = 4.5 V
ID (A)a
27.2
23.5
Qg (Typ.)
29 nC
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Conversion
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4122DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IDM
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 25
27.2
20.1
19.2b, c
15.3b, c
70
5.4
2.7b, c
40
80
6.0
3.3
3.0b, c
1.9b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Document Number: 68665
S-81220-Rev. A, 02-Jun-08
Typical
33
16
Maximum
42
21
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 7.5
Si4122DY
Vishay Siliconix
24 6.0
18 4.5
12 3.0
6 1.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2.0
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
1.6
1.2
0.8
0.4
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68665
S-81220-Rev. A, 02-Jun-08
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SI4122DY.PDF ] |
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SI4122DY | N-Channel 40-V (D-S) MOSFET | Vishay Siliconix |
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