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PDF SI4116DY Data sheet ( Hoja de datos )
| Número de pieza | SI4116DY | |
| Descripción | N-Channel 25-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4116DY
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0086 at VGS = 10 V
25 0.0095 at VGS = 4.5 V
0.0115 at VGS = 2.5 V
ID (A)a
18
17
15.5
Qg (Typ.)
17.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4116DY-T1-E3 (Lead (Pb)-free)
Si4116DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Buck
- Low Side
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
25
± 12
18
14.3
12.7b, c
10.1b, c
50
4.5
2.2b, c
20
20
5
3.2
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
Symbol
RthJA
RthJF
Typical
43
19
Maximum
50
25
Unit
°C/W
Document Number: 69837
S-83046-Rev. C, 22-Dec-08
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
Si4116DY
Vishay Siliconix
16
12
8
4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6.0 1.60
4.8 1.28
3.6 0.96
2.4 0.64
1.2 0.32
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69837
S-83046-Rev. C, 22-Dec-08
www.vishay.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4116DY.PDF ] | |
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