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PDF SI4114DY Data sheet ( Hoja de datos )
| Número de pieza | SI4114DY | |
| Descripción | N-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4114DY
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.006 at VGS = 10 V
20
0.007 at VGS = 4.5 V
ID (A)a
20e
20e
Qg (Typ.)
27.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4114DY-T1-E3 (Lead (Pb)-free)
Si4114DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Low-Side MOSFET for Synchronous Buck
- Game Machine
- PC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
20
± 16
20e
18.2
15.2b, c
12.1b, c
50
5.1
2.2b, c
30
45
5.7
3.6
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
e. Package limited.
Symbol
RthJA
RthJF
Document Number: 68394
S09-0764-Rev. B, 04-May-09
Typical
39
18
Maximum
50
22
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
Si4114DY
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.0 1.80
5.6 1.44
4.2 1.08
2.8 0.72
1.4 0.36
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68394
S09-0764-Rev. B, 04-May-09
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4114DY.PDF ] | |
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