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PDF SI4108DY Data sheet ( Hoja de datos )
| Número de pieza | SI4108DY | |
| Descripción | N-Channel 75-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4108DY
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
75 0.0098 at VGS = 10 V
ID (A)a
20.5
Qg (Typ.)
36 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Primary Side Switch
• Half Bridge
• Intermediate Bus Converter
G
RoHS
COMPLIANT
D
Top View
Ordering Information: Si4108DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
75
± 20
20.5
16.4
13.8b, c
11.1b, c
60
6.5
3b, c
32
51.2
7.8
5
3.6b, c
2.3b, c
- 55 to 150
260
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Document Number: 68635
S-81195-Rev. A, 26-May-08
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
Si4108DY
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
10 2.0
8 1.6
6 1.2
4 0.8
2 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68635
S-81195-Rev. A, 26-May-08
www.vishay.com
5
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