|
|
PDF SI4104DY Data sheet ( Hoja de datos )
| Número de pieza | SI4104DY | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SI4104DY (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
New Product
N-Channel 100-V (D-S) MOSFET
Si4104DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.105 at VGS = 10 V
ID (A)a
4.6
Qg (Typ.)
8.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchET® Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• High Frequency DC/DC Converter
• High Frequency Boost Converter
• LED Backlight for LCD TV
D
G
Ordering Information: Si4104DY-T1-E3 (Lead (Pb)-free)
Si4104DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
4.6
3.7
3.2b, c
2.6b, c
15
4.1
2.0b, c
9
4
5.0
3.2
2.5b, c
1.6b, c
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 69936
S09-0764-Rev. B, 04-May-09
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
5
4
3
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6.0 2.0
Si4104DY
Vishay Siliconix
4.8 1.6
3.6 1.2
2.4 0.8
1.2 0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69936
S09-0764-Rev. B, 04-May-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4104DY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SI4104DY | N-Channel 100-V (D-S) MOSFET | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |