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PDF SI4102DY Data sheet ( Hoja de datos )
| Número de pieza | SI4102DY | |
| Descripción | N-Channel 100-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 100 V (D-S) MOSFET
Si4102DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.158 at VGS = 10 V
100
0.175 at VGS = 6 V
ID (A)d
3.8
3.6
Qg (Typ.)
4.6 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4102DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20
3.8
3
2.7a, b
2.1a, b
8
4
2a, b
6
1.8
4.8
3
2.4a, b
1.5a, b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under steady state conditions is 85 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
42
21
Maximum
53
26
Unit
V
A
A
mJ
W
°C
Unit
°C/W
Document Number: 69252
For technical questions, contact: [email protected]
www.vishay.com
S13-0631-Rev. C, 25-Mar-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
55
44
33
22
11
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si4102DY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69252
For technical questions, contact: [email protected]
www.vishay.com
S13-0631-Rev. C, 25-Mar-13
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4102DY.PDF ] | |
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