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PDF SI4100DY Data sheet ( Hoja de datos )

Número de pieza SI4100DY
Descripción N-Channel 100-V (D-S) MOSFET
Fabricantes Vishay Siliconix 
Logotipo Vishay Siliconix Logotipo



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No Preview Available ! SI4100DY Hoja de datos, Descripción, Manual

N-Channel 100-V (D-S) MOSFET
Si4100DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.063 at VGS = 10 V
100
0.084 at VGS = 6 V
ID (A)d
6.8
5.8
Qg (Typ.)
9 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• High Frequency Boost Converter
• LED Backlight for LCD TV
D
G
Ordering Information: Si4100DY-T1-E3 (Lead (Pb)-free)
Si4100DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
6.8
5.4
4.4a, b
3.5a, b
20
5
2.1a, b
19
18
6
3.8
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, c
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. TC = 25 °C.
Symbol
RthJA
RthJF
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
Typical
37
17
Maximum
50
21
Unit
°C/W
www.vishay.com
1

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SI4100DY pdf
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
86
5
6
4
43
2
2
1
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si4100DY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
www.vishay.com
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