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Número de pieza | SI4048DY | |
Descripción | N-Channel 30 V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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N-Channel 30 V (D-S) MOSFET
Si4048DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0085 at VGS = 10 V
30
0.0105 at VGS = 4.5 V
ID (A)a
19.3
17.3
Qg (Typ.)
15 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook DC/DC
- High Side
D
G
Top View
Ordering Information: Si4048DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
30
± 20
19.3
15.3
12.7b, c
10.2b, c
70
20
20
5.1
2.2b, c
5.7
3.6
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
°C/W
Document Number: 66816
S10-2009-Rev. A, 06-Sep-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
Si4048DY
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
7.0 1.80
5.6 1.44
4.2 1.08
2.8 0.72
1.4 0.36
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Foot
150
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 66816
S10-2009-Rev. A, 06-Sep-10
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet SI4048DY.PDF ] |
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SI4048DY | N-Channel 30 V (D-S) MOSFET | Vishay Siliconix |
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