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PDF SI4004DY Data sheet ( Hoja de datos )
| Número de pieza | SI4004DY | |
| Descripción | N-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si4004DY
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
RDS(on) (Ω)
0.0138 at VGS = 10 V
0.0192 at VGS = 4.5 V
ID (A)a, e
12
12
Qg (Typ.)
10.6 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
D
G
Top View
Ordering Information: Si4004DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
20
± 20
12e
12e
11b, c
8.8b, c
70
4.2
2.1b, c
25
31
5.0
3.2
2.5b, c
1.6b, c
- 55 to 150
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 92 °C/W.
e. Package limited.
Document Number: 70338
S10-1288-Rev. A, 31-May-10
Symbol
RthJA
RthJF
Typical
43
19
Maximum
50
25
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18.0
Si4004DY
Vishay Siliconix
13.5
Package Limited
9.0
4.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6.0 2.0
1.6
4.5
1.2
3.0
0.8
1.5
0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70338
S10-1288-Rev. A, 31-May-10
www.vishay.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4004DY.PDF ] | |
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