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PDF SI3932DV Data sheet ( Hoja de datos )
| Número de pieza | SI3932DV | |
| Descripción | Dual N-Channel 30 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si3932DV
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.058 at VGS = 10 V
30
0.073 at VGS = 4.5 V
ID (A)a
3.7
3.3
Qg (Typ.)
1.8 nC
TSOP-6
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
• DC/DC Converters
G1
3 mm S2
G2
16
25
34
2.85 mm
D1
S1
D2
Marking Code
MH XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3932DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
3.7
3
3.4b, c
2.7b, c
15
1.17
0.95b, c
1.4
0.9
1.14b, c
0.73b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Maximum Junction-to-Foot
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W.
Symbol
RthJA
RthJF
Typical
93
75
Maximum
110
90
Unit
V
A
W
°C
Unit
°C/W
Document Number: 65736
S10-0642-Rev. A, 22-Mar-10
www.vishay.com
1
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5 1.6
Si3932DV
Vishay Siliconix
4
Package Limited
3
2
1
1.2
0.8
0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
50 75 100 125
TC - Foot Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65736
S10-0642-Rev. A, 22-Mar-10
www.vishay.com
5
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| PDF Descargar | [ Datasheet SI3932DV.PDF ] | |
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