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PDF SI3585DV Data sheet ( Hoja de datos )
| Número de pieza | SI3585DV | |
| Descripción | N- and P-Channel 20-V (D-S) MOSFET | |
| Fabricantes | Vaishali Semiconductor | |
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Si3585DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
–20
rDS(on) (W)
0.125 @ VGS = 4.5 V
0.200 @ VGS = 2.5 V
0.200 @ VGS = –4.5 V
0.340 @ VGS = –2.5 V
ID (A)
2.4
1.8
–1.8
–1.2
G1
3 mm S2
G2
TSOP-6
Top View
16
25
34
2.85 mm
D1
S1
D2
D1
G1
S1
N-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
2.4
1.7
1.05
1.15
0.59
20
"12
8
2.0 –1.8
1.4 –1.3
0.75
–1.05
0.83
1.15
0.53
0.59
–55 to 150
–20
"12
–1.5
–1.2
–7
–0.75
0.83
0.53
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
Symbol
RthJA
RthJF
N-Channel
Typ Max
93 110
130 150
75 90
P-Channel
Typ Max
93 110
130 150
75 90
Unit
_C/W
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Si3585DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
N-CHANNEL
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 4.5 thru 4 V
8
3.5 V
3V
6
4 2.5 V
8
6
4
1 10
P-CHANNEL
Transfer Characteristics
TC = –55_C
25_C
125_C
2
0
0
0.6
2V
1.5 V
1234
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS – Gate-to-Source Voltage (V)
Capacitance
450
0.5
VGS = 2.5 V
0.4
0.3
VGS = 3.6 V
0.2
VGS = 4.5 V
0.1
0.0
01234567
ID – Drain Current (A)
Ciss
360
270
180
Coss
90
Crss
0
0
4
8 12 16
VDS – Drain-to-Source Voltage (V)
20
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI3585DV.PDF ] | |
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