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PDF SI3585CDV Data sheet ( Hoja de datos )
| Número de pieza | SI3585CDV | |
| Descripción | N- and P-Channel 20 V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si3585CDV
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel 20
0.058 at VGS = 4.5 V
0.078 at VGS = 2.5 V
P-Channel - 20 0.195 at VGS = - 4.5 V
0.316 at VGS = - 2.5 V
ID (A)a
3.9
3.3
- 2.1
- 1.7
Qg (Typ.)
2.9 nC
1.6 nC
TSOP-6
Top View
G1 1 6 D1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
• Drivers: Motor, Solenoid, Relay
D1 S2
3 mm S2
G2
25
34
2.85 mm
S1
Marking Code
D2
EC XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3585CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 20
- 20
Gate-Source Voltage
TC = 25 °C
VGS
± 12
3.9 - 2.1
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
3.1
3.5b, c
2.8b, c
- 1.7
- 1.9b, c
- 1.5b, c
Pulsed Drain Current (t = 300 µs)
Source Drain Current Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
IDM
IS
12
1.2
0.9b, c
1.4
-5
- 1.1
- 0.9b, c
1.3
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
0.9
1.1b, c
0.7b, c
0.8
1.1b, c
0.7b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambientb, d
t5s
Symbol
RthJA
Typ.
93
Max.
110
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
75 90
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W for N-Channel and 155 °C/W for P-Channel.
P-Channel
Typ.
97
Max.
115
78 95
Unit
°C/W
Document Number: 67470
www.vishay.com
S11-0613-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.08
TJ = 150 °C
1
TJ = 25 °C
0.065
0.05
0.035
Si3585CDV
Vishay Siliconix
ID = 3.5 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
1.2
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.05
0.9
ID = 250 μA
0.75
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.02
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
6
5
4
3
2
1
0
0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power
100
Limited by RDS(on)*
10
100 μs
1 1 ms
10 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1 10
100 ms
1 s, 10 s
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67470
www.vishay.com
S11-0613-Rev. A, 04-Apr-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
Si3585CDV
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 155 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67470.
Document Number: 67470
www.vishay.com
S11-0613-Rev. A, 04-Apr-11
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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