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PDF SI3475DV Data sheet ( Hoja de datos )
| Número de pieza | SI3475DV | |
| Descripción | P-Channel 200-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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P-Channel 200-V (D-S) MOSFET
Si3475DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 200
1.61 at VGS = - 10 V
1.65 at VGS = - 6 V
ID (A)a
- 0.95
- 0.93
Qg (Typ)
8 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
RoHS
COMPLIANT
• Active Clamp Circuits in DC/DC Power Supplies
TSOP-6
Top View
D1
6D
S
3 mm D
G
25
34
2.85 mm
D
S
Marking Code
AI XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si3475DV-T1-E3 (Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot
t ≤ 5 sec
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
51
32
G
D
P-Channel MOSFET
Limit
- 200
± 20
- 0.95a
- 0.77
- 0.75b,c
- 0.59b,c
-3
- 2.6
1.6b,c
3
0.45
3.2
2.1
2b,c
1.25b,c
- 55 to 150
Unit
V
A
mJ
W
°C
Maximum
62.5
39
Unit
°C/W
Document Number: 74249
S-62239–Rev. A, 06-Nov-06
www.vishay.com
1
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1 page  
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.1
0.9
Si3475DV
Vishay Siliconix
0.7
0.4
0.2
0
0 25 50 75 100 125 150
TC – Case Temperature (°C)
Current Derating*
4.0 1.5
3.2 1.2
2.4 0.9
1.6 0.6
0.8 0.3
0.0
0
25 50 75 100 125
TC – Case Temperature (°C)
Power, Junction-to-Foot
150
0.0
0
25 50 75 100 125 150
TC – Case Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-
sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 74249
S-62239–Rev. A, 06-Nov-06
www.vishay.com
5
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI3475DV.PDF ] | |
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