(PDF) BU706DF Datasheet - Silicon NPN Power Transistor

Número de pieza	BU706DF
Descripción	Silicon NPN Power Transistor
Fabricantes	Inchange Semiconductor
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No Preview Available ! www.DataSheet.co.kr INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BU706DF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) ·High Switching Speed ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 5A ICM Collector Current-Peak 8A IBB Base Current-Continuous 3A IBM Base Current-Peak Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5A 32 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 3.95 ℃/W Thermal Resistance, Junction to Ambient 35 ℃/W isc Website：www.iscsemi.cn Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF BU706DF Data sheet ( Hoja de datos )