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PDF AM4502C Data sheet ( Hoja de datos )
| Número de pieza | AM4502C | |
| Descripción | P & N-Channel MOSFET | |
| Fabricantes | BYD | |
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BYD Microelectronics Co., Ltd.
AM4502C
P & N-Channel MOSFET
General Description
The AM4502C uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for used as DC-DC converters and power
managements in portable and battery-powered products.
Features
• N-Channel: VDS (V) =30V
P-Channel: VDS (V) =-30V
• Low on-state resistance
N-Channel:
RDS(on) = 16 mΩ MAX (VGS = 10V, ID =10A)
RDS(on) = 20 mΩ MAX (VGS = 4.5V, ID = 8.4A)
P-Channel:
RDS(on) = 23 mΩ MAX (VGS = -10V, ID =-8.5A)
RDS(on) = 33 mΩ MAX (VGS =-4.5V, ID =-6.8A)
• Fast switching speed
Absolute Maximum Ratings (Ta = 25℃)
PARAMETER
SYMBOL N-Channel P-Channel UNIT
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
30
20
-30 V
-25 V
Drain Current (DC)a
Drain Current (pulse)b
TA=25℃
TA=70℃
ID(DC)
ID(pulse)
10
8.1
±50
-8.5
-6.8 A
±50 A
Contnuous Source Current (Diode
Conduction)a
IS
2.3
-2.1 A
Total Power Dissipationa
Channel Temperature
TA=25℃
TA=70℃
PT
Tch
2.1 2.1
1.3 1.3
150
W
℃
Operating Junction and Storage
Temperature Range
Tstg
-55~+150
℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient t<=10sec
Steady State
RθJA
Maximum
62.5
110
Units
℃/W
℃/W
Note a. Mounted on FR4 Board of 1”x1”.
b. Pulse width limited by maximum junction temperature
Caution: These values must not be exceeded under any conditions.
Datasheet
ES-BYD-WDZCE03D-065 Rev.A/0
Page 1 of 8
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
BYD Microelectronics Co., Ltd.
AM4502C
Typical Electrical Characteristics(N-Channel)
50
VGS=10V 6V
40
4V
30
20
3V
10
0
0 0.5 1 1.5 2
VDS Drain-Source Voltage (V)
Figure 1.O n-Re gion Characte ristics
1.6
VGS=10V
1.4 ID=10A
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T J-Junction T emperature(℃)
Figure 3. O n-Re sistance Variations With
Te mpe rature
2
1.7
1.4 4.5V
6.0V
1.1
10V
0.8
0.5
0
10 20 30 40 50
ID Drain Current(A)
Figure 2. O n-Re sistance ws Drain Curre nt
0.05
0.04 ID=10A
0.03
0.02
0.01 T A=25℃
0
2468
VGS Gate to Source Voltage（V）
10
Figure 4. O n-Re sistance Variation VS Gate
to Source Voltage
Datasheet
ES-BYD-WDZCE03D-065 Rev.A/0
Page 5 of 8
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AM4502C.PDF ] | |
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