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PDF AON7462 Data sheet ( Hoja de datos )

Número de pieza AON7462
Descripción 300V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AON7462 Hoja de datos, Descripción, Manual

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AON7462
300V,2.5A N-Channel MOSFET
General Description
The AON7462 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability this device can be adopted
quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested!
100% Rg Tested!
DFN 3x3A_EP
Top View
Bottom View
350V@150
2.5A
< 1.5
D
Pin 1
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
CurrentB
Pulsed Drain Current C
TC=25°C
TC=100°C
ID
IDM
Continuous Drain
Current
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
IDSM
IAR
EAR
EAS
dv/dt
Power Dissipation B
TC=25°C
TC=100°C
PD
Power Dissipation A
TA=25°C
TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Maximum
300
±30
2.5
1.6
7.2
0.9
0.7
1.4
29
58
5
25
10
3.1
2
-50 to 150
Typ Max
30 40
60 75
4.2 5
Rev0: Feb 2011
www.aosmd.com
S
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W
W
°C
Units
°C/W
°C/W
°C/W
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AON7462 pdf
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AON7462
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
0
0
25 50 75 100 125
TCASE (°C)
Figure 12: Power De-rating (Note B)
150
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Current De-rating (Note B)
150
100
80
60
40
20
0
0.0001
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1 1
Pulse Width (s)
10
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
100
1000
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=75°C/W
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
100
1000
Rev 0: Feb 2011
www.aosmd.com
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